BROWSE

Related Scientist

cces's photo.

cces
강상관계물질연구단
more info

ITEM VIEW & DOWNLOAD

Electronic-dimensionality reduction of bulk MoS2 by hydrogen treatment

DC Field Value Language
dc.contributor.authorSoohyun Cho-
dc.contributor.authorBeom Seo Kim-
dc.contributor.authorBeomyoung Kim-
dc.contributor.authorWonshik Kyung-
dc.contributor.authorJeongjin Seo-
dc.contributor.authorMin Park-
dc.contributor.authorJun Woo Jeon-
dc.contributor.authorKiyohisa Tanaka-
dc.contributor.authorJonathan D. Denlinger-
dc.contributor.authorChangyoung Kim-
dc.contributor.authorDorj Odkhuu-
dc.contributor.authorByung Hoon Kim-
dc.contributor.authorSeung Ryong Park-
dc.date.available2019-01-03T05:32:24Z-
dc.date.created2018-10-15-
dc.date.issued2018-09-
dc.identifier.issn1463-9076-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5170-
dc.description.abstractA reduction in the electronic-dimensionality of materials is one method for achieving improvements in material properties. Here, a reduction in electronic-dimensionality is demonstrated using a simple hydrogen treatment technique. Quantum well states from hydrogen-treated bulk 2H-MoS2 are observed using angle resolved photoemission spectroscopy (ARPES). The electronic states are confined within a few MoS2 layers after the hydrogen treatment. A significant reduction in the band-gap can also be achieved after the hydrogen treatment, and both phenomena can be explained by the formation of sulfur vacancies generated by the chemical reaction between sulfur and hydrogen. ©the Owner Societies 2018-
dc.description.uri1-
dc.language영어-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleElectronic-dimensionality reduction of bulk MoS2 by hydrogen treatment-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000445220500061-
dc.identifier.scopusid2-s2.0-85053301703-
dc.identifier.rimsid65727-
dc.contributor.affiliatedAuthorSoohyun Cho-
dc.contributor.affiliatedAuthorBeom Seo Kim-
dc.contributor.affiliatedAuthorWonshik Kyung-
dc.contributor.affiliatedAuthorJeongjin Seo-
dc.contributor.affiliatedAuthorChangyoung Kim-
dc.identifier.doi10.1039/c8cp02365d-
dc.identifier.bibliographicCitationPHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.20, no.35, pp.23007 - 23012-
dc.citation.titlePHYSICAL CHEMISTRY CHEMICAL PHYSICS-
dc.citation.volume20-
dc.citation.number35-
dc.citation.startPage23007-
dc.citation.endPage23012-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusVALLEY POLARIZATION-
dc.subject.keywordPlusMONOLAYER WSE2-
dc.subject.keywordPlusATOMIC LAYERS-
dc.subject.keywordPlusQUANTUM-WELLS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Electronic-dimensionality reduction of bulk MoS2_c8cp02365d.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse