BROWSE

Related Scientist

Researcher

양자나노과학 연구단
양자나노과학 연구단
more info

Gate-tunable graphene-organic interface barrier for vertical transistor and logic inverter

Cited 0 time in webofscience Cited 0 time in scopus
32 Viewed 9 Downloaded
Title
Gate-tunable graphene-organic interface barrier for vertical transistor and logic inverter
Author(s)
Subir Parui; Mario Ribeiro; Ainhoa Atxabal; Kaushik Bairagi; Elisabetta Zuccatti; C. K. Safeer; Roger Llopis; Felix Casanova; Luis E. Hueso
Publication Date
2018-10
Journal
APPLIED PHYSICS LETTERS, v.113, no.15, pp.153301 -
Publisher
AMER INST PHYSICS
Abstract
One of the key requirements for efficient organic-electronic devices is the creation of a negligible energy barrier for carrier injection at the metal-organic interface. Here, a graphene-organic interface with an almost negligible energy barrier is demonstrated in a high-performance hybrid heterojunction device. The gate-tunable current-voltage characteristics show that the electronic transport can be tuned from an interface-limited to a bulk-dominated regime by lowering the graphene-organic interface energy barrier. N-type transistors with a PTCDI-C8 organic thin film as an active layer provide an ON-OFF current ratio of similar to 10(7), while similar p-type transistors with a CuPc molecular layer reach an ON-OFF current ratio of similar to 10(5). Furthermore, logic inverters with standby current as low as similar to 1 pA are demonstrated using a combination of both n- and p-type transistors. Published by AIP Publishing. (c) 2018 Aauthor(s)
URI
https://pr.ibs.re.kr/handle/8788114/5102
ISSN
0003-6951
Appears in Collections:
Center for Quantum Nanoscience(양자나노과학 연구단) > Journal Papers (저널 논문)
Files in This Item:
1.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse