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Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy

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Title
Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy
Author(s)
Ji Ho Sung; Hoseok Heo; Saerom Si; Yong Hyeon Kim; Hyeong Rae Noh; Kyung Song; Juho Kim; Chang-Soo Lee; Seung-Young Seo; Dong-Hwi Kim; Hyoung Kug Kim; Han Woong Yeom; Tae-Hwan Kim; Si-Young Choi; Jun Sung Kim; Moon-Ho Jo
Publication Date
2017-11
Journal
Nature Nanotechnology, v.12, no.11, pp.1064 - 1070
Publisher
NATURE PUBLISHING GROUP
Abstract
Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T′) and semiconducting (2H) MoTe2 crystals within the same atomic planes by heteroepitaxy. The realized polymorphic coplanar contact is atomically coherent, and its barrier potential is spatially tight-confined over a length of only a few nanometres, with a lowest contact barrier height of ∼25 meV. We also demonstrate the generality of our synthetic integration approach for other TMDC polymorph films with large areas. © 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/4044
ISSN
1748-3387
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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