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Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts

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Title
Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts
Author(s)
Tae-Eon Park; Byoung-Chul Min; Hee Gyum Park; Jaejun Lee; Moon-Ho Jo; Chaun Jang; Hyun Cheol Koo; Heon-Jin Choi; Joonyeon Chang
Publication Date
2017-08
Journal
APPLIED PHYSICS LETTERS, v.111, no.6, pp.062402 -
Publisher
AMER INST PHYSICS
Abstract
We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 k Omega and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices. Published by AIP Publishing.
URI
https://pr.ibs.re.kr/handle/8788114/3993
ISSN
0003-6951
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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