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Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

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Title
Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
Author(s)
Doohee Cho; Gyeongcheol Gye; Jinwon Lee; Sung-Hoon Lee; Lihai Wang; Sang-Wook Cheong; Han Woong Yeom
Publication Date
2017-08
Journal
NATURE COMMUNICATIONS, v.8, no.1, pp.392 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave insulator 1T-TaS2 using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of domain walls and edges of domains. Theoretical calculations reveal their atomistic origin as the local reconstruction of domain walls under the strong influence of electron correlation. Our results introduce a concept for the domain wall electronic property, the walls own internal degrees of freedom, which is potentially related to the controllability of domain wall electronic properties. © 2017 The Author(s)
URI
http://pr.ibs.re.kr/handle/8788114/3986
DOI
10.1038/s41467-017-00438-2
ISSN
2041-1723
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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