Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
DC Field | Value | Language |
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dc.contributor.author | Yeong Jae Shin | - |
dc.contributor.author | Lingfei Wang | - |
dc.contributor.author | Yoonkoo Kim | - |
dc.contributor.author | Ho-Hyun Nahm | - |
dc.contributor.author | Daesu Lee | - |
dc.contributor.author | Jeong Rae Kim | - |
dc.contributor.author | Sang Mo Yang | - |
dc.contributor.author | Jong-Gul Yoon | - |
dc.contributor.author | Jin-Seok Chung | - |
dc.contributor.author | Miyoung Kim | - |
dc.contributor.author | Seo Hyoung Chang | - |
dc.contributor.author | Tae Won Noh | - |
dc.date.available | 2017-10-17T00:26:09Z | - |
dc.date.created | 2017-09-25 | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/3846 | - |
dc.description.abstract | With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures. © 2017 American Chemical Society | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | ferroelectric | - |
dc.subject | interface engineering | - |
dc.subject | oxide heterostructure | - |
dc.subject | pulsed laser deposition | - |
dc.subject | thermodynamic surface stability | - |
dc.title | Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000408178400073 | - |
dc.identifier.scopusid | 2-s2.0-85027410779 | - |
dc.identifier.rimsid | 60340 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Yeong Jae Shin | - |
dc.contributor.affiliatedAuthor | Lingfei Wang | - |
dc.contributor.affiliatedAuthor | Ho-Hyun Nahm | - |
dc.contributor.affiliatedAuthor | Daesu Lee | - |
dc.contributor.affiliatedAuthor | Jeong Rae Kim | - |
dc.contributor.affiliatedAuthor | Tae Won Noh | - |
dc.identifier.doi | 10.1021/acsami.7b07813 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27305 - 27312 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 32 | - |
dc.citation.startPage | 27305 | - |
dc.citation.endPage | 27312 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 2 | - |
dc.description.scptc | 2 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | interface engineering | - |
dc.subject.keywordAuthor | oxide heterostructure | - |
dc.subject.keywordAuthor | pulsed laser deposition | - |
dc.subject.keywordAuthor | thermodynamic surface stability | - |