Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures

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Title
Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures
Author(s)
Pramoda K. Nayak; Yevhen Horbatenko; Seongjoon Ahn; Gwangwoo Kim; Jae-Ung Lee; Kyung Yeol Ma; A-Rang Jang; Hyunseob Lim; Dogyeong Kim; Sunmin Ryu; Hyeonsik Cheong; Noejung Park; Hyeon Suk Shin
Publication Date
2017-04
Journal
ACS NANO, v.11, no.4, pp.4041 - 4050
Publisher
AMER CHEMICAL SOC
Abstract
Interlayer excitons were observed at the heterojunctions in van der Waals heterostructures (vdW HSs). However, it is not known how the excitonic phenomena are affected by the stacking order. Here, we report twist-angle-dependent interlayer excitons in MoSe2/WSe2 vdW HSs based on photoluminescence (PL) and vdW-corrected density functional theory calculations. The PL intensity of the interlayer excitons depends primarily on the twist angle: It is enhanced at coherently stacked angles of 0° and 60° (owing to strong interlayer coupling) but disappears at incoherent intermediate angles. The calculations confirm twist-angle-dependent interlayer coupling: The states at the edges of the valence band exhibit a long tail that stretches over the other layer for coherently stacked angles; however, the states are largely confined in the respective layers for intermediate angles. This interlayer hybridization of the band edge states also correlates with the interlayer separation between MoSe2 and WSe2 layers. Furthermore, the interlayer coupling becomes insignificant, irrespective of twist angles, by the incorporation of a hexagonal boron nitride monolayer between MoSe2 and WSe2. © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3817
ISSN
1936-0851
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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