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Direct Probing of the Electronic Structures of Single-Layer and Bilayer Graphene with a Hexagonal Boron Nitride Tunneling Barrier

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Title
Direct Probing of the Electronic Structures of Single-Layer and Bilayer Graphene with a Hexagonal Boron Nitride Tunneling Barrier
Author(s)
Suyong Jung; Nojoon Myoung; Jaesung Park; Tae Young Jeong; Hakseong Kim; Kenji Watanabe; Takashi Taniguchi; Dong Han Ha; Chanyong Hwang; Hee Chul Park
Publication Date
2017-01
Journal
NANO LETTERS, v.17, no.1, pp.206 - 213
Publisher
AMER CHEMICAL SOC
Abstract
The chemical and mechanical stability of hexagonal boron nitride (h-BN) thin films and their compatibility with other free-standing two-dimensional (2D) crystals to form van der Waals heterostructures make the h-BN-2D tunnel junction an intriguing experimental platform not only for the engineering of specific device functionalities but also for the promotion of quantum measurement capabilities. Here, we exploit the h-BN-graphene tunnel junction to directly probe the electronic structures of single-layer and bilayer graphene in the presence and the absence of external magnetic fields with unprecedented high signal-to-noise ratios. At a zero magnetic field, we identify the tunneling spectra related to the charge neutrality point and the opening of the electric-field-induced bilayer energy gap. In the quantum Hall regime, the quantization of 2D electron gas into Landau levels (LL) is seen as early as 0.2 T, and as many as 30 well-separated LL tunneling conductance oscillations are observed for both electron- and hole-doped regions. Our device simulations successfully reproduce the experimental observations. Additionally, we extract the relative permittivity of three-to-five layer h-BN and find that the screening capability of thin h-BN films is as much as 60% weaker than bulk h-BN. © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3363
ISSN
1530-6984
Appears in Collections:
Center for Theoretical Physics of Complex Systems(복잡계 이론물리 연구단) > Journal Papers (저널논문)
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