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원자제어저차원전자계연구단
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Direct observation of the M2 phase with its Mott transition in a VO2 film

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dc.contributor.authorHoon Kim-
dc.contributor.authorSlusar T.V.-
dc.contributor.authorDirk Wulferding-
dc.contributor.authorIlkyu Yang-
dc.contributor.authorCho J.-C.-
dc.contributor.authorMinkyung Lee-
dc.contributor.authorHee Cheul Choi-
dc.contributor.authorJeong Y.H.-
dc.contributor.authorKim H.-T.-
dc.contributor.authorJeehoon Kim-
dc.date.available2017-01-26T05:17:55Z-
dc.date.created2017-01-19-
dc.date.issued2016-12-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3330-
dc.description.abstractIn VO2, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the presence of electron correlation in undimerized vanadium ions. However, the origin of the M2 phase is still obscure. Here, we study a granular VO2 film using conductive atomic force microscopy and Raman scattering. Upon the structural transition from monoclinic to rutile, we observe directly an intermediate state showing the coexistence of monoclinic M1 and M2 phases. The conductivity near the grain boundary in this regime is six times larger than that of the grain core, producing a donut-like landscape. Our results reveal an intra-grain percolation process, indicating that VO2 with the M2 phase is a Mott insulator. © 2016 Author(s-
dc.description.uri1-
dc.language영어-
dc.publisherAMER INST PHYSICS-
dc.titleDirect observation of the M2 phase with its Mott transition in a VO2 film-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000390677700037-
dc.identifier.scopusid2-s2.0-85002906339-
dc.identifier.rimsid58421ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHoon Kim-
dc.contributor.affiliatedAuthorDirk Wulferding-
dc.contributor.affiliatedAuthorIlkyu Yang-
dc.contributor.affiliatedAuthorMinkyung Lee-
dc.contributor.affiliatedAuthorHee Cheul Choi-
dc.contributor.affiliatedAuthorJeehoon Kim-
dc.identifier.doi10.1063/1.4971848-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.109, no.23, pp.233104-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume109-
dc.citation.number23-
dc.citation.startPage233104-
dc.date.scptcdate2018-10-01-
dc.description.wostc6-
dc.description.scptc8-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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