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Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory

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Title
Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory
Author(s)
Sung Kyu Kim; Jong Yoon Kim; Sung-Yool Choi; Jeong Yong Lee; Hu Young Jeong
Publication Date
2015-11
Journal
ADVANCED FUNCTIONAL MATERIALS, v.25, no.43, pp.6710 - 6715
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Determining the presence of conducting filaments in resistive random access memory with nanoscale thin films is vital to unraveling resistive switching mechanisms. Bistable resistive switching within graphene-oxide (GO)-based resistive memory devices, recently developed by many research groups, has been generally explained by the formation and rupture of conducting filaments induced by the diffusion of metal or oxygen ions. Using a low-voltage spherical aberration-corrected transmission electron microscopy (TEM), we directly observe metallic nanofilaments formed at the amorphous top interface layer with the application of external voltages in an Al/GO/Al memory system. Atomic-resolution TEM images acquired at an acceleration voltage of 80 kV clearly show that the conducting nanofilaments are composed of nanosized aluminum crystalline within the amorphous top interface layer after applying a negative bias (ON state). Simultaneously, we observe the change in the crystallinity of GO films by the back-diffusion of oxygen ions. The oxygen-deficient regions are clearly confirmed by energy-filtered TEM oxygen elemental mapping. This work could provide strong evidence to confirm the resistive switching mechanism previously suggested by our group. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/3324
ISSN
1616-301X
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
Files in This Item:
Adv. Funct. Mater. 2015, 25, 6710–6715.pdfDownload

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