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다차원 탄소재료 연구단
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Laser-induced phase separation of silicon carbide

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Title
Laser-induced phase separation of silicon carbide
Author(s)
Insung Choi; Hu Young Jeong; Hyeyoung Shin; Gyeongwon Kang; Myunghwan Byun; Hyungjun Kim; Adrian M. Chitu; James S. Im; Rodney S. Ruoff; Sung-Yool Choi; Keon Jae Lee
Publication Date
2016-11
Journal
NATURE COMMUNICATIONS, v.7, no., pp.13562 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. © The Author(s) 2016
URI
http://pr.ibs.re.kr/handle/8788114/3257
DOI
10.1038/ncomms13562
ISSN
2041-1723
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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