Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity

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dc.contributor.authorYoungho Kang-
dc.contributor.authorHo-Hyun Nahm-
dc.contributor.authorseungwu Han-
dc.date.available2016-12-22T01:43:30Z-
dc.date.created2016-11-23-
dc.date.issued2016-10-
dc.identifier.issn2045-2322-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3045-
dc.description.abstractThe persistent photoconductivity (PPC) in ZnO has been a critical problem in opto-electrical devices employing ZnO such as ultraviolet sensors and thin film transistors for the transparent display. While the metastable state of oxygen vacancy (V-O) is widely accepted as the microscopic origin of PPC, recent experiments on the influence of temperature and oxygen environments are at variance with the V-O model. In this study, using the density-functional theory calculations, we propose a novel mechanism of PPC that involves the hydrogen-zinc vacancy defect complex (2H-V-Zn). We show that a substantial amount of 2H-V-Zn can exist during the growth process due to its low formation energy. The light absorption of 2H-V-Zn leads to the metastable state that is characterized by the formation of O-2(2-) (peroxide) around the defect, leaving the free carriers in the conduction band. Furthermore, we estimate the lifetime of photo-electrons to be similar to 20 secs, which is similar to the experimental observation. Our model also explains the experimental results showing that PPC is enhanced (suppressed) in oxygen-rich (low-temperature) conditions. By revealing a convincing origin of PPC in ZnO, we expect that the present work will pave the way for optimizing optoelectronic properties of ZnO. © The Author(s) 2016-
dc.languageENG-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleLight-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity-
dc.typeArticle-
dc.type.rimsA-
dc.identifier.wosid000385352700001-
dc.identifier.scopusid2-s2.0-84993965055-
dc.description.wostc3-
dc.date.tcdate2018-10-01-
dc.date.scptcdate2018-10-01-
dc.contributor.affiliatedAuthorHo-Hyun Nahm-
dc.identifier.bibliographicCitationSCIENTIFIC REPORTS, v.6, no., pp.35148 --
dc.description.scptc4-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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