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Band structure engineering of topological insulator heterojunctions

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Title
Band structure engineering of topological insulator heterojunctions
Author(s)
Kyung-Hwan Jin; Han Woong Yeom; Seung-Hoon Jhi
Publication Date
2016-02
Journal
PHYSICAL REVIEW B, v.93, no.7, pp.075308 -
Publisher
AMER PHYSICAL SOC
Abstract
We investigate the topological surface states in heterostructures formed from a three-dimensional topological insulator (TI) and a two-dimensional insulating thin film, using first-principles calculations and the tight-binding method. Utilizing a single Bi or Sb bilayer on top of the topological insulators Bi2Se3, Bi2 Te3, Bi2 Te2Se, and Sb2Te3, we find that the surface states evolve in very peculiar but predictable ways. We show that strong hybridization between the bilayer and TI substrates causes the topological surface states to migrate to the top bilayer. It is found that the difference in the work function of constituent layers, which determines the band alignment and the strength of hybridization, governs the character of newly emerged Dirac states. ©2016 American Physical Society
URI
http://pr.ibs.re.kr/handle/8788114/2489
DOI
10.1103/PhysRevB.93.075308
ISSN
1098-0121
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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