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한상욱
원자제어 저차원 전자계 연구단
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Hydrogenation-induced atomic stripes on the 2H- MoS2 surface

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Title
Hydrogenation-induced atomic stripes on the 2H- MoS2 surface
Author(s)
Sang Wook Han; Yun W.S.; Lee J.D.; Hwang Y.H.; Baik J.; Shin H.J.; Lee W.G.; Park Y.S.; Kim K.S.
Publication Date
2015-12
Journal
PHYSICAL REVIEW B, v.92, no.24, pp.241303 -
Publisher
AMER PHYSICAL SOC
Abstract
We report that the hydrogenation of a single crystal 2H-MoS2 induces a novel-intermediate phase between 2H and 1T phases on its surface, i.e., the large-area, uniform, robust, and surface array of atomic stripes through the intralayer atomic-plane gliding. The total energy calculations confirm that the hydrogenation-induced atomic stripes are energetically most stable on the MoS2 surface between the semiconducting 2H and metallic 1T phase. Furthermore, the electronic states associated with the hydrogen ions, which is bonded to sulfur anions on both sides of the MoS2 surface layer, appear in the vicinity of the Fermi level (EF) and reduces the band gap. This is promising in developing the monolayer-based field-effect transistor or vanishing the Schottky barrier for practical applications. ©2015 American Physical Society
URI
http://pr.ibs.re.kr/handle/8788114/2425
DOI
10.1103/PhysRevB.92.241303
ISSN
1098-0121
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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