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김근수
원자제어 저차원 전자계 연구단
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A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4 Highly Cited Paper

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Title
A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4
Author(s)
Autès G.; Isaeva A.; Moreschini L.; Johannsen J.C.; Pisoni A.; Mori R.; Zhang W.; Filatova T.G.; Kuznetsov A.N.; Forró L.; Van Den Broek W.; Kim Y.; Keun Su Kim; Lanzara A.; Denlinger J.D.; Rotenberg E.; Bostwick A.; Grioni M.; Yazyev O.V.
Publication Date
2016-02
Journal
NATURE MATERIALS, v.15, no.2, pp.154 - 158
Publisher
NATURE PUBLISHING GROUP
Abstract
Recent progress in the field of topological states of matter has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs; refs 3-6), followed by closely related ternary compounds and predictions of several weak TIs (refs 17-19). However, both the conceptual richness of Z2 classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z2 topological insulator is theoretically predicted and experimentally confirmed in the β-phase of quasi-one-dimensional bismuth iodide Bi4I4. The electronic structure of β-Bi4I4, characterized by Z2 invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements performed on the (001) surface reveal a highly anisotropic band-crossing feature located at the M¯ point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction. © 2016 Macmillan Publishers Limited. All rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/2419
ISSN
1476-1122
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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