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Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

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Title
Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
Author(s)
Doohee Cho; Sangmo Cheon; Kim K.-S.; Sung-Hoon Lee; Cho Y.-H.; Cheong S.-W.; Han Woong Yeom
Publication Date
2016-01
Journal
NATURE COMMUNICATIONS, v.7, no., pp.10453 -
Publisher
NATURE PUBLISHING GROUP
Abstract
The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
URI
http://pr.ibs.re.kr/handle/8788114/2418
DOI
10.1038/ncomms10453
ISSN
2041-1723
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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