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Rodney S. Ruoff
다차원 탄소재료 연구단
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Chemical Vapor Deposition Growth of Graphene and Related Materials

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Title
Chemical Vapor Deposition Growth of Graphene and Related Materials
Author(s)
Ryo Kitaura; Yasumitsu Miyata; Rong Xiang; James Hone; Jing Kong; Rodney S. Ruoff; Shigeo Maruyama
Publication Date
2015-12
Journal
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, v.84, no.12, pp.121013 -
Publisher
PHYSICAL SOC JAPAN
Abstract
Research on atomic layers including graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDCs) and their heterostructures has attracted a great deal of attention. Chemical vapor deposition (CVD) can provide large-area structure-defined high-quality atomic layer samples, which have considerably contributed to the recent advancement of atomic-layer research. In this article, we focus on the CVD growth of various atomic layers and review recent progresses including (1) the CVD growth of graphene using methane and ethanol as carbon sources, (2) the CVD growth of hBN using borazine and ammonia borane, (3) the CVD growth of various TMDCs using single and multi-furnace methods, and (4) CVD growth of vertical and lateral heterostructures such as graphene/hBN, MoS2/graphite, WS2/hBN and MoS2/WS2. ©2015 The Physical Society of Japan
URI
https://pr.ibs.re.kr/handle/8788114/2411
ISSN
0031-9015
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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