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원자제어 저차원 전자계 연구단
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Influence of random point defects introduced by proton irradiation on the flux creep rates and magnetic field dependence of the critical current density J c of co-evaporated GdBa2Cu3O7-δ coated conductors

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Title
Influence of random point defects introduced by proton irradiation on the flux creep rates and magnetic field dependence of the critical current density J c of co-evaporated GdBa2Cu3O7-δ coated conductors
Author(s)
Haberkorn, N.; Jeehoon Kim; Suárez, S.; Lee, J.-H.; Moon, S.H.
Publication Date
2015-12
Journal
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, v.28, no.12, pp.125007 -
Publisher
IOP PUBLISHING LTD
Abstract
We report the influence of random point defects introduced by 3 MeV proton irradiation (doses of 0.5 ×1016, 1 ×1016, 2 ×1016 and 6 ×1016 cm-2) on the vortex dynamics of co-evaporated 1.3 μm thick, GdBa2Cu3O7-δ coated conductors. Our results indicate that the inclusion of additional random point defects reduces the low field and enhances the in-field critical current densities J c. The main in-field J c enhancement takes place below 40 K, which is in agreement with the expectations for pinning by random point defects. In addition, our data show a slight though clear increase in flux creep rates as a function of irradiation fluence. Maley analysis indicates that this increment can be associated with a reduction in the exponent μ characterizing the glassy behavior. © 2015 IOP Publishing Ltd
URI
https://pr.ibs.re.kr/handle/8788114/2212
ISSN
0953-2048
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Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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