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Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy

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Title
Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy
Author(s)
Sangku Kwon; Seon Joo Lee; Sun Mi Kim; Young Keun Lee; Hyunjoon Song; Jeong Young Park
Publication Date
2015-08
Journal
NANOSCALE, v.7, no.29, pp.12297 - 12301
Publisher
ROYAL SOC CHEMISTRY
Abstract
The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 ± 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface. This journal is © The Royal Society of Chemistry
URI
https://pr.ibs.re.kr/handle/8788114/2171
ISSN
2040-3364
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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