Controlling the evolution of two-dimensional electron gas states at a metal/Bi2Se3 interface

DC Field Value Language
dc.contributor.authorHan-Jin Noh-
dc.contributor.authorJinwon Jeong-
dc.contributor.authorEn-Jin Cho-
dc.contributor.authorJoonbum Park-
dc.contributor.authorJun Sung Kim-
dc.contributor.authorIlyou Kim-
dc.contributor.authorByeong-Gyu Park-
dc.contributor.authorHyeong-Do Kim-
dc.date.available2016-01-07T09:15:04Z-
dc.date.created2015-04-20-
dc.date.issued2015-03-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2108-
dc.description.abstractWe demonstrate that the evolution of a two-dimensional electron gas system at an interface of a metal and the model topological insulator (TI) Bi2Se3 can be controlled by choosing an appropriate kind of metal element and by applying a low temperature evaporation procedure. In particular, we find that only topological surface states (TSSs) can exist at a Mn/Bi2Se3 interface, which would be useful for implementing a TI-based device with surface current channels only. The existence of TSSs alone at the interface is confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings. © 2015 American Physical Society-
dc.languageENG-
dc.publisherAMER PHYSICAL SOC-
dc.titleControlling the evolution of two-dimensional electron gas states at a metal/Bi2Se3 interface-
dc.typeArticle-
dc.type.rimsA-
dc.identifier.wosid000352077800001-
dc.identifier.scopusid2-s2.0-84926435588-
dc.description.wostc5-
dc.date.tcdate2018-10-01-
dc.date.scptcdate2018-10-01-
dc.contributor.affiliatedAuthorHyeong-Do Kim-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.91, no.12, pp.121110 --
dc.description.scptc6-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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