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Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules

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Title
Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules
Author(s)
Jong Hun Kim; Lee J.; Jae Hyeon Kim; Hwang C.C.; Lee C.; Jeong Young Park
Publication Date
2015-06
Journal
APPLIED PHYSICS LETTERS, v.106, no.25, pp.251606-1 - 251606-5
Publisher
AMER INST PHYSICS
Abstract
The electrical properties of two-dimensional atomic sheets exhibit remarkable dependences on layer thickness and surface chemistry. Here, we investigated the variation of the work function properties of MoS2 films prepared with chemical vapor deposition (CVD) on SiO2 substrates with the number of film layers. Wafer-scale CVD MoS2 films with 2, 4, and 12 layers were fabricated on SiO2, and their properties were evaluated by using Raman and photoluminescence spectroscopies. In accordance with our X-ray photoelectron spectroscopy results, our Kelvin probe force microscopy investigation found that the surface potential of the MoS2 films increases by 0.15 eV when the number of layers is increased from 2 to 12. Photoemission spectroscopy (PES) with insitu annealing under ultra high vacuum conditions was used to directly demonstrate that this work function shift is associated with the screening effects of oxygen or water molecules adsorbed on the film surface. After annealing, it was found with PES that the surface potential decreases by 0.2 eV upon the removal of the adsorbed layers, which confirms that adsorbed species have a role in the variation in the work function © 2015 AIP Publishing LLC
URI
http://pr.ibs.re.kr/handle/8788114/2011
DOI
10.1063/1.4923202
ISSN
0003-6951
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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