BROWSE

Related Scientist

cces's photo.

cces
강상관계물질연구단
more info

ITEM VIEW & DOWNLOAD

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

DC Field Value Language
dc.contributor.authorMazet, L-
dc.contributor.authorSang Mo Yang-
dc.contributor.authorKalinin, SV-
dc.contributor.authorSchamm-Chardon, S-
dc.contributor.authorDubourdieu, C-
dc.date.available2016-01-07T09:13:02Z-
dc.date.created2015-08-03-
dc.date.issued2015-06-
dc.identifier.issn1468-6996-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1999-
dc.description.abstractSrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. © 2015 National Institute for Materials Science-
dc.language영어-
dc.publisherIOP PUBLISHING LTD-
dc.subjectmolecular beam epitaxy-
dc.subjectferroelectric-
dc.subjectsemiconductor-
dc.titleA review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000357424000036-
dc.identifier.scopusid2-s2.0-84937943567-
dc.identifier.rimsid20703ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorSang Mo Yang-
dc.identifier.doi10.1088/1468-6996/16/3/036005-
dc.identifier.bibliographicCitationSCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.16, no.3, pp.036005-
dc.relation.isPartOfSCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS-
dc.citation.titleSCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS-
dc.citation.volume16-
dc.citation.number3-
dc.citation.startPage036005-
dc.date.scptcdate2018-10-01-
dc.description.wostc16-
dc.description.scptc17-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTOR-
dc.subject.keywordPlusADSORPTION-CONTROLLED GROWTH-
dc.subject.keywordPlusSRTIO3 THIN-FILMS-
dc.subject.keywordPlusNEGATIVE CAPACITANCE-
dc.subject.keywordPlusOXIDE INTERFACES-
dc.subject.keywordPlusLITHIUM-NIOBATE-
dc.subject.keywordPlusELECTRICAL CHARACTERISTICS-
dc.subject.keywordPlusELECTROOPTIC MODULATOR-
dc.subject.keywordPlusSTRUCTURAL-PROPERTIES-
dc.subject.keywordPlusDEPOLARIZATION FIELD-
dc.subject.keywordAuthormolecular beam epitaxy-
dc.subject.keywordAuthorferroelectric-
dc.subject.keywordAuthorsemiconductor-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse