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강상관계물질연구단
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Spin-orbit coupling induced band structure change and orbital character of epitaxial IrO2 films

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dc.contributor.authorWoo Jin Kim-
dc.contributor.authorSo Yeun Kim-
dc.contributor.authorChoong Hyun Kim-
dc.contributor.authorChang Hee Sohn-
dc.contributor.authorOleksandr B Korenta-
dc.contributor.authorSeung Chul Chae-
dc.contributor.authorTae Won Noh-
dc.date.available2016-01-07T09:09:43Z-
dc.date.created2016-01-07-
dc.date.issued2016-01-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1819-
dc.description.abstractWe investigated the electronic structure of IrO 2 to address the controversy regarding spin-orbit coupling (SOC) effects in metallic 5d transition-metal oxides. Two issues have come to the forefront: (1) SOC effects on electronic structure and physical properties of IrO 2 and (2) the possible formation of a novel ground state in this material, the J eff =1/2 state. To better understand the SOC mechanism, we grew epitaxial IrO 2 films whose dc resistivity values were comparable with those of a single crystal. We obtained polarization-dependent optical and x-ray absorption spectra (XAS) and compared these results with those acquired using the generalized gradient approximation (GGA) and GGA+SOC calculations. From the optical spectra, peak structures were identified at 0.4 and 2.0 eV, which could only be explained using the GGA+SOC calculation. This suggests that SOC plays an important role in the electronic structure of IrO 2 . From the polarization-dependent O1s XAS spectra, we observed that the empty state near the Fermi level lacks involvement of an Ir d xy orbital. Despite the importance of SOC in IrO 2 , the J eff =1/2 state does not form in metallic IrO 2 .©2016 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleSpin-orbit coupling induced band structure change and orbital character of epitaxial IrO2 films-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000367665400003-
dc.identifier.scopusid2-s2.0-84969759627-
dc.identifier.rimsid21925ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorWoo Jin Kim-
dc.contributor.affiliatedAuthorSo Yeun Kim-
dc.contributor.affiliatedAuthorChoong Hyun Kim-
dc.contributor.affiliatedAuthorChang Hee Sohn-
dc.contributor.affiliatedAuthorOleksandr B Korenta-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.identifier.doi10.1103/PhysRevB.93.045104-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.93, no.4, pp.045104-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume93-
dc.citation.number4-
dc.citation.startPage045104-
dc.date.scptcdate2018-10-01-
dc.description.wostc6-
dc.description.scptc6-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusOXIDE THIN-FILMS-
dc.subject.keywordPlusIRIDIUM OXIDE-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusRUO2-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusOSO-2-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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