Spin-orbit coupling induced band structure change and orbital character of epitaxial IrO2 films
DC Field | Value | Language |
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dc.contributor.author | Woo Jin Kim | - |
dc.contributor.author | So Yeun Kim | - |
dc.contributor.author | Choong Hyun Kim | - |
dc.contributor.author | Chang Hee Sohn | - |
dc.contributor.author | Oleksandr B Korenta | - |
dc.contributor.author | Seung Chul Chae | - |
dc.contributor.author | Tae Won Noh | - |
dc.date.available | 2016-01-07T09:09:43Z | - |
dc.date.created | 2016-01-07 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/1819 | - |
dc.description.abstract | We investigated the electronic structure of IrO 2 to address the controversy regarding spin-orbit coupling (SOC) effects in metallic 5d transition-metal oxides. Two issues have come to the forefront: (1) SOC effects on electronic structure and physical properties of IrO 2 and (2) the possible formation of a novel ground state in this material, the J eff =1/2 state. To better understand the SOC mechanism, we grew epitaxial IrO 2 films whose dc resistivity values were comparable with those of a single crystal. We obtained polarization-dependent optical and x-ray absorption spectra (XAS) and compared these results with those acquired using the generalized gradient approximation (GGA) and GGA+SOC calculations. From the optical spectra, peak structures were identified at 0.4 and 2.0 eV, which could only be explained using the GGA+SOC calculation. This suggests that SOC plays an important role in the electronic structure of IrO 2 . From the polarization-dependent O1s XAS spectra, we observed that the empty state near the Fermi level lacks involvement of an Ir d xy orbital. Despite the importance of SOC in IrO 2 , the J eff =1/2 state does not form in metallic IrO 2 .©2016 American Physical Society | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Spin-orbit coupling induced band structure change and orbital character of epitaxial IrO2 films | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000367665400003 | - |
dc.identifier.scopusid | 2-s2.0-84969759627 | - |
dc.identifier.rimsid | 21925 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Woo Jin Kim | - |
dc.contributor.affiliatedAuthor | So Yeun Kim | - |
dc.contributor.affiliatedAuthor | Choong Hyun Kim | - |
dc.contributor.affiliatedAuthor | Chang Hee Sohn | - |
dc.contributor.affiliatedAuthor | Oleksandr B Korenta | - |
dc.contributor.affiliatedAuthor | Tae Won Noh | - |
dc.identifier.doi | 10.1103/PhysRevB.93.045104 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.93, no.4, pp.045104 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 93 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 045104 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 6 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | IRIDIUM OXIDE | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | RUO2 | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | OSO-2 | - |