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Metal-insulator transition on the Si(111)4 x 1-In surface with oxygen impurity

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Title
Metal-insulator transition on the Si(111)4 x 1-In surface with oxygen impurity
Author(s)
Sang Hoon Uhm; Han Woong Yeom
Publication Date
2013-10
Journal
PHYSICAL REVIEW B, v.88, no.16, pp.165419 -
Publisher
AMER PHYSICAL SOC
Abstract
We investigate with low-energy-electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES) the effect of oxygen adsorbates on the phase transition of the Si(111)4 × 1-In surface. On this surface, oxygen was reported to increase the transition temperature (Tc) into the distorted 8 × 2 phase. We observed that while the Tc into the 8 × 2 phase increases up to 180 K, the substantial disorder is also induced on the surface. ARPES study reveals that the oxygen-induced 8 × 2 phase has the same insulating band structure with that on the pristine surface at a lower temperature. This indicates clearly that the oxygen-induced 4 × 1–8 × 2 transition is a consistent metal-insulator transition with that on the pristine surface. On the other hand, oxygen adsorbates slightly increase the band filling of the one-dimensional metallic bands of the 4 × 1-In surface. This contrasts with the expectation of the hole doping and the increased Tc, thus cannot be explained by the doping effect of adsorbates. A further study of the oxygen-induced 8 × 2 phase is requested to understand the microscopic mechanism of the adsorbate-induced elevation of the metal-insulator Tc.
URI
http://pr.ibs.re.kr/handle/8788114/1569
DOI
10.1103/PhysRevB.88.165419
ISSN
1098-0121
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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