BROWSE

Related Scientist

caldes's photo.

caldes
원자제어저차원전자계연구단
more info

ITEM VIEW & DOWNLOAD

Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

DC Field Value Language
dc.contributor.authorGyu Seung Choi-
dc.contributor.authorPark, Sungyu-
dc.contributor.authorEun-Su An-
dc.contributor.authorJuhong Bae-
dc.contributor.authorShin, Inseob-
dc.contributor.authorBeom Tak Kang-
dc.contributor.authorWon, Choong Jae-
dc.contributor.authorCheong, Sang-Wook-
dc.contributor.authorLee, Hyun-Woo-
dc.contributor.authorLee, Gil-Ho-
dc.contributor.authorCho, Won Joon-
dc.contributor.authorJun Sung Kim-
dc.date.accessioned2024-06-18T01:50:20Z-
dc.date.available2024-06-18T01:50:20Z-
dc.date.created2024-04-01-
dc.date.issued2024-06-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/15268-
dc.description.abstractAll-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to approximate to 20%. The resulting qICS reaches approximate to 1.65 nm-1 and the critical current density Jc approximate to 0.9 x 106 Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature. Current-driven magnetization switching via spin-orbit torque is achieved at room temperature in a van der Waals heterostructure of a bulk-insulating topological insulator Sn-doped Bi1.1Sb0.9Te2S1 and a room temperature ferromagnet, Fe3GaTe2. By controlling the thickness of the constituent layers and maximizing the relative current ratio on the topological surface states, the highly efficient spin-orbit-torque operation is realized, surpassing the performance of most previous devices. image-
dc.language영어-
dc.publisherWiley-VCH Verlag-
dc.titleHighly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001189123000001-
dc.identifier.scopusid2-s2.0-85188329733-
dc.identifier.rimsid82851-
dc.contributor.affiliatedAuthorGyu Seung Choi-
dc.contributor.affiliatedAuthorEun-Su An-
dc.contributor.affiliatedAuthorJuhong Bae-
dc.contributor.affiliatedAuthorBeom Tak Kang-
dc.contributor.affiliatedAuthorJun Sung Kim-
dc.identifier.doi10.1002/advs.202400893-
dc.identifier.bibliographicCitationAdvanced Science, v.11, no.21-
dc.relation.isPartOfAdvanced Science-
dc.citation.titleAdvanced Science-
dc.citation.volume11-
dc.citation.number21-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusSURFACE-STATES-
dc.subject.keywordPlusQUANTUM-
dc.subject.keywordAuthorspin-orbit-torque-
dc.subject.keywordAuthortopological insulator-
dc.subject.keywordAuthorVan der Waals heterostructure-
dc.subject.keywordAuthor2D ferromagnet-
dc.subject.keywordAuthorcharge-to-spin conversion-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
There are no files associated with this item.

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse