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원자제어저차원전자계연구단
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Atomic Layer-by-Layer Thermoelectric Conversion in Topological Insulator Bismuth/Antimony Tellurides

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dc.contributor.authorJi Ho Sung-
dc.contributor.authorHoseok Heo-
dc.contributor.authorInchan Hwang-
dc.contributor.authorMyungsoo Lim-
dc.contributor.authorDonghun Lee-
dc.contributor.authorKibum Kang-
dc.contributor.authorHee Cheul Choi-
dc.contributor.authorJae-Hoon Park-
dc.contributor.authorSeoung-Hoon Jhi-
dc.contributor.authorMoon Ho Jo-
dc.date.available2015-04-21T09:11:41Z-
dc.date.created2014-08-11-
dc.date.issued2014-07-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1496-
dc.description.abstractMaterial design for direct heat-to-electricity conversion with substantial efficiency essentially requires cooperative control of electrical and thermal transport. Bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3), displaying the highest thermoelectric power at room temperature, are also known as topological insulators (TIs) whose electronic structures are modified by electronic confinements and strong spin−orbit interaction in a-few-monolayers thickness regime, thus possibly providing another degree of freedom for electron and phonon transport at surfaces. Here, we explore novel thermoelectric conversion in the atomic monolayer steps of a-few-layer topological insulating Bi2Te3 (n-type) and Sb2Te3 (p-type). Specifically, by scanning photoinduced thermoelectric current imaging at the monolayer steps, we show that efficient thermoelectric conversion is accomplished by optothermal motion of hot electrons (Bi2Te3) and holes (Sb2Te3) through 2D subbands and topologically protected surface states in a geometrically deterministic manner. Our discovery suggests that the thermoelectric conversion can be interiorly achieved at the atomic steps of a homogeneous medium by direct exploiting of quantum nature of TIs, thus providing a new design rule for the compact thermoelectric circuitry at the ultimate size limit.-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectThermoelectric Conversion, Photoinduced Thermoelectrics, Seebeck Effects, Topological Insulator, Bismuth Telluride, Antimony Telluride-
dc.titleAtomic Layer-by-Layer Thermoelectric Conversion in Topological Insulator Bismuth/Antimony Tellurides-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000338979700051-
dc.identifier.scopusid2-s2.0-84903996797-
dc.identifier.rimsid31ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorJi Ho Sung-
dc.contributor.affiliatedAuthorHoseok Heo-
dc.contributor.affiliatedAuthorInchan Hwang-
dc.contributor.affiliatedAuthorDonghun Lee-
dc.contributor.affiliatedAuthorKibum Kang-
dc.contributor.affiliatedAuthorHee Cheul Choi-
dc.contributor.affiliatedAuthorMoon Ho Jo-
dc.identifier.doi10.1021/nl501468k-
dc.identifier.bibliographicCitationNANO LETTERS, v.14, no.7, pp.4030 - 4035-
dc.citation.titleNANO LETTERS-
dc.citation.volume14-
dc.citation.number7-
dc.citation.startPage4030-
dc.citation.endPage4035-
dc.date.scptcdate2018-10-01-
dc.description.wostc25-
dc.description.scptc24-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusBISMUTH TELLURIDE-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusPHOTOCURRENT-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusBI2TE3-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusCROSSOVER-
dc.subject.keywordPlusCRYSTALS-
dc.subject.keywordPlusBI2SE3-
dc.subject.keywordAuthorThermoelectric Conversion-
dc.subject.keywordAuthorPhotoinduced Thermoelectrics-
dc.subject.keywordAuthorSeebeck Effects-
dc.subject.keywordAuthorTopological Insulator-
dc.subject.keywordAuthorBismuth Telluride-
dc.subject.keywordAuthorAntimony Telluride-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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