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Transforming a surface state of a topological insulator by a Bi capping layer

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Title
Transforming a surface state of a topological insulator by a Bi capping layer
Author(s)
Han Woong Yeom; Sung Hwan Kim; Woo Jong Shin; Jin K.-H.; Park J.; Tae-Hwan; Kim J.S.; Ishikawa H.; Sakamoto K.; Jhi S.-H.
Publication Date
2014-12
Journal
PHYSICAL REVIEW B, v.90, no.23, pp.235401 -
Publisher
AMER PHYSICAL SOC
Abstract
We introduce a distinct approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.
URI
http://pr.ibs.re.kr/handle/8788114/1437
DOI
10.1103/PhysRevB.90.235401
ISSN
2469-9950
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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