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Creation of a p-type TlBiSe2 using photo-induced doping

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Title
Creation of a <i>p</i>-type TlBiSe<sub>2</sub> using photo-induced doping
Author(s)
Itaya, Ryota; Toichi, Yuichiro; Nakanishi, Ryuya; Ebara, Narunori; Nakata, Yoshitaka; Kasai, Kentaro; Kuroda, Kenta; Arita, Masashi; Yamamoto, Isamu; Keisuke Fukutani; Sakamoto, Kazuyuki
Publication Date
2023-11
Journal
PHYSICAL REVIEW MATERIALS, v.7, no.11
Publisher
AMER PHYSICAL SOC
Abstract
Owing to the location of the Dirac point, which is around the center of its wide bulk band gap, TlBiSe2 would be one of the most promising topological insulators for spintronics devices material. However, like many other topological insulators, defects, such as vacancy formed during the crystal growth, dope electrons into TlBiSe2 and make its bulk metallic. Here, we show the achievement of bulk insulating both n-type and p-type TlBiSe2 by photo-induced doping, a method carried out by a combination of photo-irradiation and H2O adsorption. We also show that the main trigger of this photo-induced doping is the excitation of the outermost d core level of the chalcogen atoms of the topmost layer as in the case of Bi2X3, where X = Se or Te.
URI
https://pr.ibs.re.kr/handle/8788114/14340
DOI
10.1103/PhysRevMaterials.7.114201
ISSN
2475-9953
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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