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강상관계물질연구단
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Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

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dc.contributor.authorDaesu Lee-
dc.contributor.authorByung Chul Jeon-
dc.contributor.authorSeung Hyub Baek-
dc.contributor.authorSang Mo Yang-
dc.contributor.authorYeong Jae Shin-
dc.contributor.authorTae Heon Kim-
dc.contributor.authorYong Su Kim-
dc.contributor.authorJong-Gul Yoon-
dc.contributor.authorChang Beom Eom-
dc.contributor.authorTae Won Noh-
dc.date.available2015-04-20T07:23:30Z-
dc.date.created2014-08-11-
dc.date.issued2012-12-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1415-
dc.description.abstractActive control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.description.uri1-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectActive control-
dc.subjectDefect dipoles-
dc.subjectDefect engineering-
dc.subjectDipolar interaction-
dc.subjectFerroelectric property-
dc.subjectFerroelectric switching-
dc.subjectMultilevel data-
dc.subjectNon-volatile memories-
dc.subjectPiezoresponse force microscopy-
dc.subjectPolarization switching-
dc.subjectDefects-
dc.subjectFerroelectricity-
dc.subjectFerroelectric materials-
dc.subjectbismuth-
dc.subjectferric ion-
dc.subjectarticle-
dc.subjectchemistry-
dc.subjectelectricity-
dc.subjectBismuth-
dc.subjectElectricity-
dc.subjectFerric Compounds-
dc.titleActive Control of Ferroelectric Switching Using Defect-Dipole Engineering-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000312302300016-
dc.identifier.scopusid2-s2.0-84871267611-
dc.identifier.rimsid193ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorDaesu Lee-
dc.contributor.affiliatedAuthorByung Chul Jeon-
dc.contributor.affiliatedAuthorSang Mo Yang-
dc.contributor.affiliatedAuthorYeong Jae Shin-
dc.contributor.affiliatedAuthorTae Heon Kim-
dc.contributor.affiliatedAuthorYong Su Kim-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.identifier.doi10.1002/adma.201203101-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.24, no.48, pp.6490 - 6495-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume24-
dc.citation.number48-
dc.citation.startPage6490-
dc.citation.endPage6495-
dc.date.scptcdate2018-10-01-
dc.description.wostc29-
dc.description.scptc26-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusPOLARIZATION CONTROL-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusSURFACES-
dc.subject.keywordPlusPHYSICS-
dc.subject.keywordPlusBIFEO3-
dc.subject.keywordAuthorferroelectrics-
dc.subject.keywordAuthordefect engineering-
dc.subject.keywordAuthorpiezoresponse force microscopy-
dc.subject.keywordAuthornonvolatile memory-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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2012-12-18-Advanced Materials-Active control.pdfDownload

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