IBS Publications Repository: Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

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IBS Publications RepositoryCenter for Correlated Electron Systems(강상관계 물질 연구단)1. Journal Papers (저널논문)

Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

DC Field	Value	Language
dc.contributor.author	Daesu Lee	-
dc.contributor.author	Byung Chul Jeon	-
dc.contributor.author	Seung Hyub Baek	-
dc.contributor.author	Sang Mo Yang	-
dc.contributor.author	Yeong Jae Shin	-
dc.contributor.author	Tae Heon Kim	-
dc.contributor.author	Yong Su Kim	-
dc.contributor.author	Jong-Gul Yoon	-
dc.contributor.author	Chang Beom Eom	-
dc.contributor.author	Tae Won Noh	-
dc.date.available	2015-04-20T07:23:30Z	-
dc.date.created	2014-08-11	-
dc.date.issued	2012-12	-
dc.identifier.issn	0935-9648	-
dc.identifier.uri	https://pr.ibs.re.kr/handle/8788114/1415	-
dc.description.abstract	Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	-
dc.description.uri	1	-
dc.language	영어	-
dc.publisher	WILEY-V C H VERLAG GMBH	-
dc.subject	Active control	-
dc.subject	Defect dipoles	-
dc.subject	Defect engineering	-
dc.subject	Dipolar interaction	-
dc.subject	Ferroelectric property	-
dc.subject	Ferroelectric switching	-
dc.subject	Multilevel data	-
dc.subject	Non-volatile memories	-
dc.subject	Piezoresponse force microscopy	-
dc.subject	Polarization switching	-
dc.subject	Defects	-
dc.subject	Ferroelectricity	-
dc.subject	Ferroelectric materials	-
dc.subject	bismuth	-
dc.subject	ferric ion	-
dc.subject	article	-
dc.subject	chemistry	-
dc.subject	electricity	-
dc.subject	Bismuth	-
dc.subject	Electricity	-
dc.subject	Ferric Compounds	-
dc.title	Active Control of Ferroelectric Switching Using Defect-Dipole Engineering	-
dc.type	Article	-
dc.type.rims	ART	-
dc.identifier.wosid	000312302300016	-
dc.identifier.scopusid	2-s2.0-84871267611	-
dc.identifier.rimsid	193	ko
dc.date.tcdate	2018-10-01	-
dc.contributor.affiliatedAuthor	Daesu Lee	-
dc.contributor.affiliatedAuthor	Byung Chul Jeon	-
dc.contributor.affiliatedAuthor	Sang Mo Yang	-
dc.contributor.affiliatedAuthor	Yeong Jae Shin	-
dc.contributor.affiliatedAuthor	Tae Heon Kim	-
dc.contributor.affiliatedAuthor	Yong Su Kim	-
dc.contributor.affiliatedAuthor	Tae Won Noh	-
dc.identifier.doi	10.1002/adma.201203101	-
dc.identifier.bibliographicCitation	ADVANCED MATERIALS, v.24, no.48, pp.6490 - 6495	-
dc.citation.title	ADVANCED MATERIALS	-
dc.citation.volume	24	-
dc.citation.number	48	-
dc.citation.startPage	6490	-
dc.citation.endPage	6495	-
dc.date.scptcdate	2018-10-01	-
dc.description.wostc	29	-
dc.description.scptc	26	-
dc.description.journalClass	1	-
dc.description.journalRegisteredClass	scie	-
dc.description.journalRegisteredClass	scopus	-
dc.subject.keywordPlus	POLARIZATION CONTROL	-
dc.subject.keywordPlus	DEPENDENCE	-
dc.subject.keywordPlus	MEMORIES	-
dc.subject.keywordPlus	SURFACES	-
dc.subject.keywordPlus	PHYSICS	-
dc.subject.keywordPlus	BIFEO3	-
dc.subject.keywordAuthor	ferroelectrics	-
dc.subject.keywordAuthor	defect engineering	-
dc.subject.keywordAuthor	piezoresponse force microscopy	-
dc.subject.keywordAuthor	nonvolatile memory	-