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원자제어저차원전자계연구단
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Topological quantum devices: a review

DC Field Value Language
dc.contributor.authorKyung-Hwan Jin-
dc.contributor.authorJiang, Wei-
dc.contributor.authorSethi, Gurjyot-
dc.contributor.authorLiu, Feng-
dc.date.accessioned2023-11-01T22:00:49Z-
dc.date.available2023-11-01T22:00:49Z-
dc.date.created2023-08-07-
dc.date.issued2023-08-
dc.identifier.issn2040-3364-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/14069-
dc.description.abstractThe introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.-
dc.language영어-
dc.publisherRoyal Society of Chemistry-
dc.titleTopological quantum devices: a review-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001032648900001-
dc.identifier.scopusid2-s2.0-85167360956-
dc.identifier.rimsid81401-
dc.contributor.affiliatedAuthorKyung-Hwan Jin-
dc.identifier.doi10.1039/d3nr01288c-
dc.identifier.bibliographicCitationNanoscale, v.31, no.15, pp.12787 - 12817-
dc.relation.isPartOfNanoscale-
dc.citation.titleNanoscale-
dc.citation.volume31-
dc.citation.number15-
dc.citation.startPage12787-
dc.citation.endPage12817-
dc.type.docTypeReview-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFLAT-BAND FERROMAGNETISM-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTOR-
dc.subject.keywordPlusSPIN HALL INSULATOR-
dc.subject.keywordPlusHUBBARD-MODEL-
dc.subject.keywordPlusEDGE STATES-
dc.subject.keywordPlusDISLOCATION SCATTERING-
dc.subject.keywordPlusFLEXIBLE ELECTRONICS-
dc.subject.keywordPlusVALLEY POLARIZATION-
dc.subject.keywordPlusMAGNETIC-FIELD-
dc.subject.keywordPlusGROUND-STATES-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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