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Reducing the oxygen vacancy concentration in SrTiO3-δ thin films via an optimized O2 plasma treatment for enhancing device properties

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dc.contributor.authorJi-Yeop Kim-
dc.contributor.authorMi-Jin Jin-
dc.contributor.authorHou, Bo-
dc.contributor.authorKim, Minsoo P.-
dc.contributor.authorUm, Doo-Seung-
dc.contributor.authorKim, Chang-Il-
dc.date.accessioned2023-10-24T22:00:13Z-
dc.date.available2023-10-24T22:00:13Z-
dc.date.created2023-10-05-
dc.date.issued2023-12-
dc.identifier.issn0169-4332-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/14012-
dc.description.abstractPerovskite materials, specifically strontium titanate (SrTiO3, STO) thin films, have gained significant attention in materials science and electronics owing to their unique properties. However, low-temperature fabrication via sputtering can introduce oxygen vacancies that compromise film quality. O2 plasma treatment (OPT) has the potential to improve film properties, such as bond recomposition, electrical conductivity, and optical properties, by reducing the number of oxygen vacancies. In this study, STO films treated by O2 plasma were characterized using analytical techniques to understand the OPT-induced microstructural, morphological, and optical changes in these films. In addition, the possibility of improving device properties by low-temperature processes was confirmed by exploring the correlation between the number of oxygen vacancies reduced by the OPT process and the enhanced film properties. This result is expected to promote the application of STO thin films in flexible electronic devices and display components and provides insights into the role of oxygen vacancies and the effectiveness of OPT as a low-temperature solution for reducing their number. © 2023-
dc.language영어-
dc.publisherElsevier BV-
dc.titleReducing the oxygen vacancy concentration in SrTiO3-δ thin films via an optimized O2 plasma treatment for enhancing device properties-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001067009600001-
dc.identifier.scopusid2-s2.0-85172457195-
dc.identifier.rimsid81840-
dc.contributor.affiliatedAuthorJi-Yeop Kim-
dc.contributor.affiliatedAuthorMi-Jin Jin-
dc.identifier.doi10.1016/j.apsusc.2023.158271-
dc.identifier.bibliographicCitationApplied Surface Science, v.639-
dc.relation.isPartOfApplied Surface Science-
dc.citation.titleApplied Surface Science-
dc.citation.volume639-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusDIELECTRIC-CONSTANT-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusXPS-
dc.subject.keywordPlusFERROELECTRICITY-
dc.subject.keywordPlusCONDUCTIVITY-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusTITANIUM-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusOXIDES-
dc.subject.keywordAuthorDefect control-
dc.subject.keywordAuthorDielectric material-
dc.subject.keywordAuthorOxygen vacancy-
dc.subject.keywordAuthorPlasma treatment-
dc.subject.keywordAuthorSputtered thin film-
dc.subject.keywordAuthorSrTiO<sub>3</sub>-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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