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다차원탄소재료연구단
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Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

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dc.contributor.authorSong, Seunguk-
dc.contributor.authorAram Yoon-
dc.contributor.authorJang, Sora-
dc.contributor.authorLynch, Jason-
dc.contributor.authorYang, Jihoon-
dc.contributor.authorHan, Juwon-
dc.contributor.authorMyeonggi Choe-
dc.contributor.authorJin, Young Ho-
dc.contributor.authorChen, Cindy Yueli-
dc.contributor.authorCheon, Yeryun-
dc.contributor.authorKwak, Jinsung-
dc.contributor.authorJeong, Changwook-
dc.contributor.authorCheong, Hyeonsik-
dc.contributor.authorJariwala, Deep-
dc.contributor.authorZonghoon Lee-
dc.contributor.authorKwon, Soon-Yong-
dc.date.accessioned2023-08-21T22:00:38Z-
dc.date.available2023-08-21T22:00:38Z-
dc.date.created2023-08-16-
dc.date.issued2023-08-
dc.identifier.issn2041-1723-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/13795-
dc.description.abstractHigh-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe2 transistor arrays with Fermi-level-tuned 1T'-phase semimetal contact electrodes. By transforming polycrystalline 1T'-MoTe2 to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe2 wafers with ultra-large single-crystalline domains and spatially-controlled single-crystalline arrays at a low temperature (~500 °C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T' semimetals and 2H semiconductors. Work function modulation of 1T'-MoTe2 electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (~0.7 kΩ·μm) and near-zero Schottky barrier height (~14 meV) of the junction interface, and leading to high on-state current (~7.8 μA/μm) and on/off current ratio (~105) in the 2H-MoTe2 transistors. © 2023. Springer Nature Limited.-
dc.language영어-
dc.publisherNLM (Medline)-
dc.titleFabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001045127700016-
dc.identifier.scopusid2-s2.0-85166785562-
dc.identifier.rimsid81440-
dc.contributor.affiliatedAuthorAram Yoon-
dc.contributor.affiliatedAuthorMyeonggi Choe-
dc.contributor.affiliatedAuthorZonghoon Lee-
dc.identifier.doi10.1038/s41467-023-40448-x-
dc.identifier.bibliographicCitationNature Communications, v.14, no.1-
dc.relation.isPartOfNature Communications-
dc.citation.titleNature Communications-
dc.citation.volume14-
dc.citation.number1-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalWebOfScienceCategoryMultidisciplinary Sciences-
dc.subject.keywordPlusFEW-LAYER MOTE2-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusOPTICAL-PARAMETERS-
dc.subject.keywordPlusCONTACT RESISTANCE-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordAuthorElectronic devices-
dc.subject.keywordAuthorTwo-dimensional materials-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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