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P-channel oxide thin film transistors using solution-processed copper oxide

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Title
P-channel oxide thin film transistors using solution-processed copper oxide
Author(s)
Kim S.Y.; Ahn C.H.; Lee J.H.; Kwon Y.H.; Hwang S.; Jeong Yong Lee; Cho H.K.
Publication Date
2013-03
Journal
ACS APPLIED MATERIALS & INTERFACES, v.5, no.7, pp.2417 - 2421
Publisher
AMER CHEMICAL SOC
Abstract
Cu2O thin films were synthesized on Si (100) substrate with thermally grown 200-nm SiO2 by sol−gel spin coating method and postannealing under different oxygen partial pressure (0.04, 0.2, and 0.9 Torr). The morphology of Cu2O thin films was improved through N2 postannealing before O2 annealing. Under relatively high oxygen partial pressure of 0.9 Torr, the roughness of synthesized films was increased with the formation of CuO phase. Bottom-gated copper oxide (CuxO) thin film transistors (TFTs) were fabricated via conventional photolithography, and the electrical properties of the fabricated TFTs were measured. The resulting Cu2O TFTs exhibited p-channel operation, and field effect mobility of 0.16 cm2/(V s) and on-to-off drain current ratio of ∼1 × 102 were observed in the TFT device annealed at PO2 of 0.04 Torr. This study presented the potential of the solution-based process of the Cu2O TFT with p-channel characteristics for the first time.
URI
https://pr.ibs.re.kr/handle/8788114/1371
ISSN
1944-8244
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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