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Ambipolar Nonvolatile Memory Behavior and Reversible Type-Conversion in MoSe2/MoSe2 Transistors with Modified Stack Interface

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dc.contributor.authorTaewook Kim-
dc.contributor.authorDonghee Kang-
dc.contributor.authorSol Lee-
dc.contributor.authorYeonsu Jeong-
dc.contributor.authorHyunmin Cho-
dc.contributor.authorJunho Kim-
dc.contributor.authorHeesun Bae-
dc.contributor.authorYeonjin Yi-
dc.contributor.authorKwanpyo Kim-
dc.contributor.authorSeongil Im-
dc.date.accessioned2023-01-26T02:40:28Z-
dc.date.available2023-01-26T02:40:28Z-
dc.date.created2022-10-29-
dc.date.issued2022-12-
dc.identifier.issn1616-301X-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/12672-
dc.description.abstract2D semiconductor devices have been studied due to their unique potential in architecture and properties. As one of the unique devices approaches, 2D hetero-stack channel field-effect transistors (FETs) have recently been reported, but homo-stack FETs are rare to find. Here, MoSe2/MoSe2 homo-stack transistors are rather fabricated for study. Unlike the equivalently-thick single MoSe2 FET, homo-stack FETs show n-type memory behavior that originates from stack interface-induced traps. Particularly, when their stack interfaces are engineered by surface oxidation of bottom MoSe2, more stable nonvolatile memory behavior turns out. Short-term ultraviolet ozone (UVO)-induced oxidation only results in n-type memory, but 15 min-long oxidation surprisingly enables both n- and p-type nonvolatile memory behavior due to nm-thin MoOx embedded between upper and lower MoSe2. Furthermore, by alternating gate voltage pulse to the 15 min-long UVO-treated FETs, channel polarity conversion appears reversible in a small gate voltage (V-GS) sweep range, which means that the channel type of a transistor can be reversibly modulated via stack interface engineering. It is believed that homo-stack interface engineering must be one of the approaches to maximize the potential of 2D devices.-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleAmbipolar Nonvolatile Memory Behavior and Reversible Type-Conversion in MoSe2/MoSe2 Transistors with Modified Stack Interface-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000865230500001-
dc.identifier.scopusid2-s2.0-85139438260-
dc.identifier.rimsid79116-
dc.contributor.affiliatedAuthorSol Lee-
dc.contributor.affiliatedAuthorKwanpyo Kim-
dc.identifier.doi10.1002/adfm.202205567-
dc.identifier.bibliographicCitationADVANCED FUNCTIONAL MATERIALS, v.32, no.49-
dc.relation.isPartOfADVANCED FUNCTIONAL MATERIALS-
dc.citation.titleADVANCED FUNCTIONAL MATERIALS-
dc.citation.volume32-
dc.citation.number49-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusCONTACT RESISTANCE-
dc.subject.keywordPlusDIRECT BANDGAP-
dc.subject.keywordPlusTHIN-
dc.subject.keywordPlusOPPORTUNITIES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorambipolar nonvolatile memories-
dc.subject.keywordAuthorchannel conversions-
dc.subject.keywordAuthorhomo-stack-
dc.subject.keywordAuthorinterface engineering-
dc.subject.keywordAuthormolybdenum diselenide-
Appears in Collections:
Center for Nanomedicine (나노의학 연구단) > 1. Journal Papers (저널논문)
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