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Atomically Thin Synapse Networks on Van Der Waals Photo-Memtransistors

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dc.contributor.authorGunho Moon-
dc.contributor.authorSeok Young Min-
dc.contributor.authorCheolhee Han-
dc.contributor.authorSuk-Ho Lee-
dc.contributor.authorHeonsu Ahn-
dc.contributor.authorSeung-Young Seo-
dc.contributor.authorFeng Ding-
dc.contributor.authorKim, Seyoung-
dc.contributor.authorMoon-Ho Jo-
dc.date.accessioned2022-10-14T22:03:07Z-
dc.date.available2022-10-14T22:03:07Z-
dc.date.created2022-09-28-
dc.date.issued2023-01-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/12354-
dc.description.abstractA new type of atomically thin synaptic network on van der Waals (vdW) heterostructures is reported, where each ultrasmall cell (approximate to 2 nm thick) built with trilayer WS2 semiconductor acts as a gate-tunable photoactive synapse, i.e., a photo-memtransistor. A train of UV pulses onto the WS2 memristor generates dopants in atomic-level precision by direct light-lattice interactions, which, along with the gate tunability, leads to the accurate modulation of the channel conductance for potentiation and depression of the synaptic cells. Such synaptic dynamics can be explained by a parallel atomistic resistor network model. In addition, it is shown that such a device scheme can generally be realized in other 2D vdW semiconductors, such as MoS2, MoSe2, MoTe2, and WSe2. Demonstration of these atomically thin photo-memtransistor arrays, where the synaptic weights can be tuned for the atomistic defect density, provides implications for a new type of artificial neural networks for parallel matrix computations with an ultrahigh integration density.-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleAtomically Thin Synapse Networks on Van Der Waals Photo-Memtransistors-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000844801000001-
dc.identifier.scopusid2-s2.0-85137061900-
dc.identifier.rimsid78881-
dc.contributor.affiliatedAuthorGunho Moon-
dc.contributor.affiliatedAuthorSeok Young Min-
dc.contributor.affiliatedAuthorCheolhee Han-
dc.contributor.affiliatedAuthorSuk-Ho Lee-
dc.contributor.affiliatedAuthorHeonsu Ahn-
dc.contributor.affiliatedAuthorSeung-Young Seo-
dc.contributor.affiliatedAuthorFeng Ding-
dc.contributor.affiliatedAuthorMoon-Ho Jo-
dc.identifier.doi10.1002/adma.202203481-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.35, no.4-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume35-
dc.citation.number4-
dc.type.docTypeArticle; Early Access-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusMEMRISTIVE CROSSBAR ARRAYS-
dc.subject.keywordPlusNEURAL-NETWORKS-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthornanotechnology-
dc.subject.keywordAuthorsemiconductors-
dc.subject.keywordAuthorsynaptic devices-
dc.subject.keywordAuthorvan der Waals materials-
Appears in Collections:
Center for Van der Waals Quantum Solids(반데르발스 양자 물질 연구단) > 1. Journal Papers (저널논문)
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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