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원자제어 저차원 전자계 연구단
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Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

DC Field Value Language
dc.contributor.authorKo, Wonhee-
dc.contributor.authorHus, Saban-
dc.contributor.authorHoil Kim-
dc.contributor.authorJun Sung Kim-
dc.contributor.authorZhang, Xiao-Guang-
dc.contributor.authorLi, An-Ping-
dc.date.accessioned2022-07-29T07:45:07Z-
dc.date.available2022-07-29T07:45:07Z-
dc.date.created2022-06-30-
dc.date.issued2022-05-
dc.identifier.issn2296-8016-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/12043-
dc.description.abstractElectron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi2Te2Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 m omega center dot cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.-
dc.language영어-
dc.publisherFRONTIERS MEDIA SA-
dc.titleResistivity of Surface Steps in Bulk-Insulating Topological Insulators-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000806196100001-
dc.identifier.scopusid2-s2.0-85131734868-
dc.identifier.rimsid78421-
dc.contributor.affiliatedAuthorHoil Kim-
dc.contributor.affiliatedAuthorJun Sung Kim-
dc.identifier.doi10.3389/fmats.2022.887484-
dc.identifier.bibliographicCitationFRONTIERS IN MATERIALS, v.9-
dc.relation.isPartOfFRONTIERS IN MATERIALS-
dc.citation.titleFRONTIERS IN MATERIALS-
dc.citation.volume9-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusCHANNELS-
dc.subject.keywordAuthortopological phase of matter-
dc.subject.keywordAuthorfour-probe transport spectroscopy-
dc.subject.keywordAuthoratomic step-
dc.subject.keywordAuthordefect-
dc.subject.keywordAuthortopological insulator-
dc.subject.keywordAuthorelectrical transport-
dc.subject.keywordAuthortopological surface states-
dc.subject.keywordAuthorscanning tunneling microscopy-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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