Multi-stage anisotropic etching of two-dimensional heterostructures (Apr, 10.1007/s12274-022-4193-x, 2022)
DC Field | Value | Language |
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dc.contributor.author | Li, Lin | - |
dc.contributor.author | Jichen Dong | - |
dc.contributor.author | Geng, Dechao | - |
dc.contributor.author | Li, Menghan | - |
dc.contributor.author | Fu, Wei | - |
dc.contributor.author | Feng Ding | - |
dc.contributor.author | Hu, Wenping | - |
dc.contributor.author | Yang, Hui Ying | - |
dc.date.accessioned | 2022-07-28T04:47:09Z | - |
dc.date.available | 2022-07-28T04:47:09Z | - |
dc.date.created | 2022-06-02 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 1998-0124 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/11961 | - |
dc.description.abstract | Regarding the reverse process of materials growth, etching has been widely concerned to indirectly probe the growth kinetics, offering an avenue in governing the growth of two-dimensional (2D) materials. In this work, interface-driven anisotropic etching mode is demonstrated for the first time to be generally applied to 2D heterostructures. It is shown that the typical in-plane graphene and hexagonal boron nitride (h-BN) heterostructures follow a multi-stage etching behavior initiated first along the interfacial region between the two materials and then along edges of neighboring h-BN flakes and finally along central edges of h-BN. By accurately tuning etching conditions in the chemical vapor deposition process, series of etched 2D heterostructure patterns are controllably produced. Furthermore, scaled formation of graphene and h-BN heterostructures arrays has been realized with full assist of as-proposed etching mechanism, offering a direct top-down method to make 2D orientated heterostructures with order and complexity. Detection of interface-driven multi-staged anisotropic etching mode will shed light on understanding growth mechanism and further expanding wide applications of 2D heterostructures. | - |
dc.language | 영어 | - |
dc.publisher | TSINGHUA UNIV PRESS | - |
dc.title | Multi-stage anisotropic etching of two-dimensional heterostructures (Apr, 10.1007/s12274-022-4193-x, 2022) | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000788936400001 | - |
dc.identifier.scopusid | 2-s2.0-85136448079 | - |
dc.identifier.rimsid | 78227 | - |
dc.contributor.affiliatedAuthor | Jichen Dong | - |
dc.contributor.affiliatedAuthor | Feng Ding | - |
dc.identifier.doi | 10.1007/s12274-022-4387-2 | - |
dc.identifier.bibliographicCitation | NANO RESEARCH, v.15, no.6, pp.4909 - 4915 | - |
dc.relation.isPartOf | NANO RESEARCH | - |
dc.citation.title | NANO RESEARCH | - |
dc.citation.volume | 15 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 4909 | - |
dc.citation.endPage | 4915 | - |
dc.type.docType | Correction | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | anisotropic etching | - |
dc.subject.keywordAuthor | two-dimensional materials | - |
dc.subject.keywordAuthor | heterostructures | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | h-BN | - |