Evolution of defect formation during atomically precise desulfurization of monolayer MoS2
DC Field | Value | Language |
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dc.contributor.author | Jong-Young Lee | - |
dc.contributor.author | Jong Hun Kim | - |
dc.contributor.author | Yeonjoon Jung | - |
dc.contributor.author | June Chul Shin | - |
dc.contributor.author | Yangjin Lee | - |
dc.contributor.author | Namwon Kim | - |
dc.contributor.author | Namwon Kim | - |
dc.contributor.author | Arend M. van der Zande | - |
dc.contributor.author | Jangyup Son | - |
dc.contributor.author | Gwan-Hyoung Lee | - |
dc.date.accessioned | 2022-06-13T06:19:37Z | - |
dc.date.available | 2022-06-13T06:19:37Z | - |
dc.date.created | 2022-04-13 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.issn | 2662-4443 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/11756 | - |
dc.description.abstract | Structural symmetry-breaking is a key strategy to modify the physical and chemical properties of two-dimensional transition metal dichalcogenides. However, little is known about defect formation during this process. Here, with atomic-scale microscopy, we investigate the evolution of defect formation in monolayer MoS2 exposed indirectly to hydrogen plasma. At the beginning of the treatment only top-layer sulfur atoms are removed, while vacancies and the molybdenum atomic layer are maintained. As processing continues, hexagonal-shaped nanocracks are generated along the zigzag edge during relaxation of defect-induced strain. As defect density increases, both photoluminescence and conductivity of MoS2 gradually decreases. Furthermore, MoS2 showed increased friction by 50% due to defect-induced contact stiffness. Our study reveals the details of defect formation during the desulfurization of MoS2 and helps to design the symmetry-breaking transition metal dichalcogenides, which is of relevance for applications including photocatalyst for water splitting, and Janus heterostructures. © 2021, The Author(s). | - |
dc.language | 영어 | - |
dc.publisher | Springer Nature | - |
dc.title | Evolution of defect formation during atomically precise desulfurization of monolayer MoS2 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.scopusid | 2-s2.0-85118880642 | - |
dc.identifier.rimsid | 78037 | - |
dc.contributor.affiliatedAuthor | Yangjin Lee | - |
dc.contributor.affiliatedAuthor | Namwon Kim | - |
dc.identifier.doi | 10.1038/s43246-021-00185-4 | - |
dc.identifier.bibliographicCitation | Communications Materials, v.2, no.1 | - |
dc.relation.isPartOf | Communications Materials | - |
dc.citation.title | Communications Materials | - |
dc.citation.volume | 2 | - |
dc.citation.number | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |