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원자제어저차원전자계연구단
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Twisted van der Waals Josephson Junction Based on a High- TcSuperconductor

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dc.contributor.authorLee, Jongyun-
dc.contributor.authorLee, Wonjun-
dc.contributor.authorKim, Gi-Yeop-
dc.contributor.authorChoi, Yong-Bin-
dc.contributor.authorPark, Jinho-
dc.contributor.authorJang, Seong-
dc.contributor.authorGu, Genda-
dc.contributor.authorChoi, Si-Young-
dc.contributor.authorGil Young Cho-
dc.contributor.authorLee, Gil-Ho-
dc.contributor.authorLee, Hu-Jong-
dc.date.accessioned2022-01-04T07:30:19Z-
dc.date.available2022-01-04T07:30:19Z-
dc.date.created2021-12-28-
dc.date.issued2021-12-22-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/10987-
dc.description.abstract© 2021 American Chemical Society.Stacking two-dimensional van der Waals (vdW) materials rotated with respect to each other show versatility for studying exotic quantum phenomena. In particular, anisotropic layered materials have great potential for such twistronics applications, providing high tunability. Here, we report anisotropic superconducting order parameters in twisted Bi2Sr2CaCu2O8+x (Bi-2212) vdW junctions with an atomically clean vdW interface, achieved using the microcleave-and-stack technique. The vdW junctions with twist angles of 0° and 90° showed the maximum Josephson coupling, comparable to that of intrinsic Josephson junctions. As the twist angle approaches 45°, Josephson coupling is suppressed, and eventually disappears at 45°. The observed twist angle dependence of the Josephson coupling can be explained quantitatively by theoretical calculation with the d-wave superconducting order parameter of Bi-2212 and finite tunneling incoherence of the junction. Our results revealed the anisotropic nature of Bi-2212 and provided a novel fabrication technique for vdW-based twistronics platforms compatible with air-sensitive vdW materials.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleTwisted van der Waals Josephson Junction Based on a High- TcSuperconductor-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000731618000001-
dc.identifier.scopusid2-s2.0-85121209133-
dc.identifier.rimsid76976-
dc.contributor.affiliatedAuthorGil Young Cho-
dc.identifier.doi10.1021/acs.nanolett.1c03906-
dc.identifier.bibliographicCitationNano Letters, v.21, no.24, pp.10469 - 10477-
dc.relation.isPartOfNano Letters-
dc.citation.titleNano Letters-
dc.citation.volume21-
dc.citation.number24-
dc.citation.startPage10469-
dc.citation.endPage10477-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusPHYSICAL-PROPERTIES-
dc.subject.keywordPlusSINGLE-CRYSTALS-
dc.subject.keywordPlusGAP ANISOTROPY-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusPHASE-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusMICROWAVES-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusCURRENTS-
dc.subject.keywordPlusBI-2212-
dc.subject.keywordAuthorhigh- Tcsuperconductor-
dc.subject.keywordAuthorJosephson junction-
dc.subject.keywordAuthortwistronics-
dc.subject.keywordAuthorvan der Waals material-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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