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Gangtae, Jin
원자제어 저차원 전자계 연구단
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Heteroepitaxial van der Waals semiconductor superlattices

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Title
Heteroepitaxial van der Waals semiconductor superlattices
Author(s)
Gangtae Jin; Chang-Soo Lee; Okello, Odongo F. N.; Suk-Ho Lee; Min Yeong Park; Soonyoung Cha; Seung-Young Seo; Gunho Moon; Seok Young Min; Yang, Dong-Hwan; Cheolhee Han; Ahn, Hyungju; Lee, Jekwan; Choi, Hyunyong; Jonghwan Kim; Choi, Si-Young; Moon-Ho Jo
Publication Date
2021-10
Journal
NATURE NANOTECHNOLOGY, v.16, no.10, pp.1092 - 1098
Publisher
NATURE RESEARCH
Abstract
Kinetics-controlled van der Waals epitaxy in the near-equilibrium limit by metal-organic chemical vapour deposition enables precise layer-by-layer stacking of dissimilar transition metal dichalcogenides. A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS2, WS2 and WSe2. Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal-organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations-one of the most distinctive electronic features in vdW ML semiconductors-which scale with the stack numbers n in our (MoS2/WS2)(n) SLs on optical excitations.
URI
https://pr.ibs.re.kr/handle/8788114/10905
DOI
10.1038/s41565-021-00942-z
ISSN
1748-3387
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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