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YAO, Qirong
원자제어 저차원 전자계 연구단
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Engineering Domain Wall Electronic States in Strongly Correlated van der Waals Material of 1T-TaS2

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Title
Engineering Domain Wall Electronic States in Strongly Correlated van der Waals Material of 1T-TaS2
Author(s)
Qirong Yao; Jae Whan Park; Eunseok Oh; Han Woong Yeom
Publication Date
2021-11-24
Journal
Nano Letters, v.21, no.22, pp.9699 - 9705
Publisher
American Chemical Society
Abstract
© 2021 The Authors. Published by American Chemical Society.Although a few physical methods were demonstrated for domain wall engineering in various electronic or ferroic materials with broken discrete symmetries, the direct control over the electronic properties of individual domain walls has been extremely limited. Here, we introduce a chemical method to tune the electronic property of domain walls in 1T tantalum disulfide. By using scanning tunneling microscopy and spectroscopy techniques, we find that indium adatoms on 1T-TaS2 have distinct behaviors on the domains with different bulk terminations. Moreover, the adatoms form their own chains along the edges of neighboring domains. The density functional theory calculations reveal a 1D Mott insulating state on a modified domain wall, resulting from the degenerated spin-polarized bands with electron doping from adsorbates and charge transfer from neighboring domains. This work suggests that chemical decoration by adsorbates can be widely used to tune local electronic states of domain walls and various 2D materials.
URI
https://pr.ibs.re.kr/handle/8788114/10903
DOI
10.1021/acs.nanolett.1c03522
ISSN
1530-6984
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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