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YAO, Qirong
원자제어 저차원 전자계 연구단
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Engineering Domain Wall Electronic States in Strongly Correlated van der Waals Material of 1T-TaS2

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dc.contributor.authorQirong Yao-
dc.contributor.authorJae Whan Park-
dc.contributor.authorEunseok Oh-
dc.contributor.authorHan Woong Yeom-
dc.date.accessioned2021-12-20T02:30:13Z-
dc.date.available2021-12-20T02:30:13Z-
dc.date.created2021-12-15-
dc.date.issued2021-11-24-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/10903-
dc.description.abstract© 2021 The Authors. Published by American Chemical Society.Although a few physical methods were demonstrated for domain wall engineering in various electronic or ferroic materials with broken discrete symmetries, the direct control over the electronic properties of individual domain walls has been extremely limited. Here, we introduce a chemical method to tune the electronic property of domain walls in 1T tantalum disulfide. By using scanning tunneling microscopy and spectroscopy techniques, we find that indium adatoms on 1T-TaS2 have distinct behaviors on the domains with different bulk terminations. Moreover, the adatoms form their own chains along the edges of neighboring domains. The density functional theory calculations reveal a 1D Mott insulating state on a modified domain wall, resulting from the degenerated spin-polarized bands with electron doping from adsorbates and charge transfer from neighboring domains. This work suggests that chemical decoration by adsorbates can be widely used to tune local electronic states of domain walls and various 2D materials.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleEngineering Domain Wall Electronic States in Strongly Correlated van der Waals Material of 1T-TaS2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000756421600043-
dc.identifier.scopusid2-s2.0-85119599097-
dc.identifier.rimsid76857-
dc.contributor.affiliatedAuthorQirong Yao-
dc.contributor.affiliatedAuthorJae Whan Park-
dc.contributor.affiliatedAuthorEunseok Oh-
dc.contributor.affiliatedAuthorHan Woong Yeom-
dc.identifier.doi10.1021/acs.nanolett.1c03522-
dc.identifier.bibliographicCitationNano Letters, v.21, no.22, pp.9699 - 9705-
dc.relation.isPartOfNano Letters-
dc.citation.titleNano Letters-
dc.citation.volume21-
dc.citation.number22-
dc.citation.startPage9699-
dc.citation.endPage9705-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordAuthor1D Mott insulating state-
dc.subject.keywordAuthor1T tantalum disulfide-
dc.subject.keywordAuthorchemical decoration-
dc.subject.keywordAuthordomain wall engineering-
dc.subject.keywordAuthorindium adatom chain-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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