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Highly Efficient Nonvolatile Magnetization Switching and Multi-Level States by Current in Single Van der Waals Topological Ferromagnet Fe3GeTe2

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Title
Highly Efficient Nonvolatile Magnetization Switching and Multi-Level States by Current in Single Van der Waals Topological Ferromagnet Fe3GeTe2
Author(s)
Kaixuan Zhang; Youjin Lee; Matthew J. Coak; Junghyun Kim; Suhan Son; Inho Hwang; Ko, Dong-Su; Oh, Youngtek; Jeon, Insu; Kim, Dohun; Zeng, Changgan; Lee, Hyun-Woo; Je-Geun Park
Publication Date
2021-12
Journal
Advanced Functional Materials, v.31, no.49
Publisher
John Wiley and Sons Inc
Abstract
© 2021 Wiley-VCH GmbHRobust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here, nonvolatile and highly energy-efficient magnetization switching is achieved in a single-material device formed of van-der-Waals (vdW) topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin-orbit-torque magnetic random access memory based on conventional magnet/heavy-metal systems. Most importantly, multi-level states, switched by electrical current are also demonstrated, which can dramatically enhance the information capacity density and reduce computing costs. Thus, the observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of vdW magnets in the field of spin memory and spintronics.
URI
https://pr.ibs.re.kr/handle/8788114/10814
DOI
10.1002/adfm.202105992
ISSN
1616-301X
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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