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Prakash, SULTANE
다차원 탄소재료 연구단
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Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition

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Title
Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
Author(s)
Jang, Yoonseo; Jung, Dohwan; Prakash R. Sultane; Eric S. Larsen; Christopher W. Bielawski; Oh, Jungwoo
Publication Date
2022-01
Journal
Applied Surface Science, v.572
Publisher
Elsevier B.V.
Abstract
© 2021Beryllium oxide (BeO) is a unique metal oxide that exhibits high thermal conductivity and a high dielectric constant, even though it has a large bandgap energy. These characteristics can potentially address the electromagnetic issues associated with contemporary nanoscale electronic devices. However, BeO is mainly used as a heat-dissipating and refractory layer in sintering powders. To extend the use of BeO in semiconductor front-end-of-line processes, we developed nanoscale BeO thin films by using state-of-the-art atomic layer deposition (ALD). The physical and electrical properties of the BeO thin films were evaluated by introducing O2 plasma and H2O vapor as oxidation sources for the ALD process. A controlled plasma-enhanced ALD (PEALD) process led to the production of c-axis grown crystalline wurtzite BeO (0 0 2) films with a high growth rate per cycle at low substrate temperatures. The plasma energy was found to be adequately compensate for the high substrate temperature required for thermal ALD (ThALD). The bandgap energy (7.9 eV), calculated via inelastic energy loss analysis, and the dielectric constant (8.75) and breakdown voltage (10.3 MV/cm), obtained from MOS capacitors, are optimal for nanoscale electronic device applications.
URI
https://pr.ibs.re.kr/handle/8788114/10673
DOI
10.1016/j.apsusc.2021.151405
ISSN
0169-4332
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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