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Mechanism of MoS2Growth on a Au(111) Surface: An Ab Initio Molecular Dynamics Study

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dc.contributor.authorPeng Shao-
dc.contributor.authorLi-Ping Ding-
dc.contributor.authorFeng Ding-
dc.date.accessioned2021-08-03T01:30:16Z-
dc.date.accessioned2021-08-03T01:30:16Z-
dc.date.available2021-08-03T01:30:16Z-
dc.date.available2021-08-03T01:30:16Z-
dc.date.created2021-07-07-
dc.date.issued2021-05-11-
dc.identifier.issn0897-4756-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/10018-
dc.description.abstract© 2021 American Chemical Society. All rights reserved.Chemical vapor deposition (CVD) of transition-metal dichalcogenide (TMD) thin films, such as MoS2, on a gold (Au) surface has been regarded as one of the most promising approaches for the mass production of high-quality TMD thin films. However, the mechanism of TMD CVD growth on a gold surface remains a mystery, and many experimental observations, such as the surface chemistry during the initial stage of TMD growth and the formation of T-phase MoS2 on a Au surface, remain unclear. In this study, we systematically explored the initial stage of MoS2CVD growth on a Au(111) surface by using density functional theory-based molecular dynamics simulations. Some critical steps of MoS2 growth, such as the sulfidation of MoO3, the passivation of the Au(111) surface in the S-rich environment, and the lifting of Mo atoms from the Au substrate to form stable MoS2 nuclei, have been revealed in our atomic simulations. The theoretically predicted most stable T-phase small MoS2 clusters agree well with the previous experimental observations. Therefore, with an increase in the size of MoS2, a phase transition from the T phase to the H phase is essential for the growth of highly stable H-phase MoS2 films. This study greatly deepens our understanding of the mechanism of TMD CVD growth on a Au surface and provides guidance for the controllable CVD synthesis of various TMDs.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleMechanism of MoS2Growth on a Au(111) Surface: An Ab Initio Molecular Dynamics Study-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000651524100020-
dc.identifier.scopusid2-s2.0-85106404458-
dc.identifier.rimsid75999-
dc.contributor.affiliatedAuthorPeng Shao-
dc.contributor.affiliatedAuthorLi-Ping Ding-
dc.contributor.affiliatedAuthorFeng Ding-
dc.identifier.doi10.1021/acs.chemmater.1c00116-
dc.identifier.bibliographicCitationChemistry of Materials, v.33, no.9, pp.3241 - 3248-
dc.relation.isPartOfChemistry of Materials-
dc.citation.titleChemistry of Materials-
dc.citation.volume33-
dc.citation.number9-
dc.citation.startPage3241-
dc.citation.endPage3248-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusTOTAL-ENERGY CALCULATIONS-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusNANOSHEETS-
dc.subject.keywordPlusSULFUR-
dc.subject.keywordPlusCHEMISTRY-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordAuthorSulfur-
dc.subject.keywordAuthorGold-
dc.subject.keywordAuthorEnergy-
dc.subject.keywordAuthorCluster chemistry-
dc.subject.keywordAuthorChemical vapor deposition-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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