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다차원 탄소재료 연구단
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Theoretical calculation boosting the chemical vapor deposition growth of graphene film

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Title
Theoretical calculation boosting the chemical vapor deposition growth of graphene film
Author(s)
Ting Cheng; Luzhao Sun; Liu, Zhirong; Feng Ding; Liu, Zhongfan
Publication Date
2021-06
Journal
APL Materials, v.9, no.6
Publisher
American Institute of Physics Inc.
Abstract
© 2021 Author(s).Chemical vapor deposition (CVD) is a promising method for the mass production of high-quality graphene films, and great progress has been made over the last decade. Currently, the CVD growth of graphene is being pushed to achieve further advancements, such as super-clean, ultra-flat, and defect-free materials, as well as controlling the layer, stacking order, and doping level during large-scale preparation. The production of high-quality graphene by CVD relies on an in-depth knowledge of the growth mechanisms, in which theoretical calculations play a crucial role in providing valuable insights into the energy-, time-, and scale-dependent processes occurring during high-temperature growth. Here, we focus on the theoretical calculations and discuss the recent progress and challenges that need to be overcome to achieve controllable growth of high-quality graphene films on transition-metal substrates. Furthermore, we present some state-of-the-art graphene-related structures with novel properties, which are expected to enable new applications of graphene-based materials.
URI
https://pr.ibs.re.kr/handle/8788114/10017
DOI
10.1063/5.0051847
ISSN
2166-532X
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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