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Publication Date2019-08 Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field
Hyunjin Ji; Hojoon Yi; Sakong Wonkil, et al
NANOTECHNOLOGY, v.30, no.34, pp.345206
Publication Date2019-08 Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors
Hyunjin Ji; Mohan Kumar Ghimire; Gwanmu Lee, et al
ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29022 - 29028

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