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Publication Date2017-03 Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
Byoung Hee Moon; Gang Hee Han; Hyun Kim, et al
ACS APPLIED MATERIALS & INTERFACES, v.9, no.12, pp.11240 - 11246

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