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Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers

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dc.contributor.authorLee, Jekwan-
dc.contributor.authorHeo, Wonhyeok-
dc.contributor.authorCha, Myungjun-
dc.contributor.authorWatanabe, Kenji-
dc.contributor.authorTaniguchi, Takashi-
dc.contributor.authorKim, Jehyun-
dc.contributor.authorSoonyoung Cha-
dc.contributor.authorKim, Dohun-
dc.contributor.authorMoon-Ho Jo-
dc.contributor.authorChoi, Hyunyong-
dc.date.accessioned2021-04-16T06:30:02Z-
dc.date.accessioned2021-04-16T06:30:02Z-
dc.date.available2021-04-16T06:30:02Z-
dc.date.available2021-04-16T06:30:02Z-
dc.date.created2021-03-24-
dc.date.issued2021-03-12-
dc.identifier.issn2041-1723-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/9474-
dc.description.abstractThe valley Hall effect (VHE) in two-dimensional (2D) van der Waals (vdW) crystals is a promising approach to study the valley pseudospin. Most experiments so far have used bound electron-hole pairs (excitons) through local photoexcitation. However, the valley depolarization of such excitons is fast, so that several challenges remain to be resolved. We address this issue by exploiting a unipolar VHE using a heterobilayer made of monolayer MoS2/WTe2 to exhibit a long valley-polarized lifetime due to the absence of electron-hole exchange interaction. The unipolar VHE is manifested by reduced photoluminescence at the MoS2 A exciton energy. Furthermore, we provide quantitative information on the time-dependent valley Hall dynamics by performing the spatially-resolved ultrafast Kerr-rotation microscopy; we find that the valley-polarized electrons persist for more than 4 nanoseconds and the valley Hall mobility exceeds 4.49x10(3)cm(2)/Vs, which is orders of magnitude larger than previous reports. The valley Hall effect in 2D materials is a promising approach for future valleytronic applications, but it is usually based on excitons with short lifetimes. Here, spin polarized electrons are injected from WTe2 into MoS2, leading to a unipolar valley Hall effect with enhanced lifetimes and mobility.-
dc.language영어-
dc.publisherNATURE RESEARCH-
dc.titleUltrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000630419400026-
dc.identifier.scopusid2-s2.0-85102348235-
dc.identifier.rimsid75122-
dc.contributor.affiliatedAuthorSoonyoung Cha-
dc.contributor.affiliatedAuthorMoon-Ho Jo-
dc.identifier.doi10.1038/s41467-021-21013-w-
dc.identifier.bibliographicCitationNATURE COMMUNICATIONS, v.12, no.1-
dc.relation.isPartOfNATURE COMMUNICATIONS-
dc.citation.titleNATURE COMMUNICATIONS-
dc.citation.volume12-
dc.citation.number1-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalWebOfScienceCategoryMultidisciplinary Sciences-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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