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Yeom, Han Woong
원자제어 저차원 전자계 연구단
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Doping-induced topological phase transition in Bi: The role of quantum electronic stress

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Title
Doping-induced topological phase transition in Bi: The role of quantum electronic stress
Author(s)
Kyung-Hwan Jin; Han Woong Yeom; Feng Liu
Subject
BISMUTH, ; SUPERCONDUCTIVITY, ; INSULATOR
Publication Date
2020-01
Journal
PHYSICAL REVIEW B, v.101, no.3, pp.035111
Publisher
AMER PHYSICAL SOC
Abstract
©2020 American Physical Society AMER PHYSICAL SOC_Charge doping is an essential means to tailor a materials' properties. However, besides moving the Fermi level, charge doping is generally not expected to induce topological phase transition (TPT). Here, using first-principles calculations, we demonstrate an electron doping-induced TPT in bulk Bi from a higher-order topological insulator (HOTI) to a TI. The underlying mechanism is revealed to be driven by an electron doping-induced quantum electronic stress (QES), which in turn induces a highly anisotropic lattice expansion to close/reopen the small energy gap in Bi band structure. Our finding significantly resolves an outstanding controversy concerning the topological characterization of bulk Bi among existing experiments and theories, and explains the physical origin of the topological order in Bi (111) thin films. It sheds new light on the fundamental understanding of topological properties of small band gap materials in relation to doping and QES
URI
https://pr.ibs.re.kr/handle/8788114/8733
DOI
10.1103/PhysRevB.101.035111
ISSN
2469-9950
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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